研究员

韩宁，男，1982年4月生，化学工程专业博士，研究员。主要从事氧化物半导体及III-V半导体纳米材料的合成表征及其在气体传感器、微电子器件、环境催化等领域的应用研究。在Nature Communications, Advanced Materials, ACS Nano, Sensors & Actuators B, Applied Catalysis B等杂志累计发表各类中、英文学术论文140余篇，被他人引用3000多次，编写英文著作2章/节，申请15项（授权5项）中国发明专利及PCT专利，获得山东省自然科学二等奖

1. A. Wang, L. Zhang, M. Rahimi, S. Gong, L. Nie, N. Han*, Y. Chen*, Defect Engineering of ZnO for Electron Transfer in O3 Catalytic Decomposition, Applied Catalysis B Environmental, 2020, 277: 119223;
2. D. Li, C. Lan, A. Manikandan, S. Yip, Z. Zhou, X. Liang, L. Shu, Y.L. Chueh, N. Han*, J.C. Ho*, Ultra-Fast Photodetectors based on High-Mobility Indium Gallium Antimonide Nanowires, Nature Communications, 2019, 10: 1664;
3. S.Y. Gong, Z. Xie, W. Li, X. Wu, N. Han*, Y.F. Chen*, Highly active and humidity resistive perovskite LaFeO3 based catalysts for efficient ozone decomposition, Applied Catalysis B Environmental, 2019, 241: 578-587;
4. J.M. Sun+, Y.X. Yin+, M.M. Han, Z.X. Yang*, C.Y. Lan, L.Z. Liu, Y. Wang, N. Han*, L.F. Shen, X.L. Wu, J.C. Ho*, Unique Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit, ACS Nano, 2018, 12(10): 10410-10418;
5. Z.X. Yang, L.Z. Liu, S.P. Yip, D.P. Li, L.F. Shen, Z.Y. Zhou, N. Han*, T.F. Hung, E.Y. Pun, X.L. Wu, A.M. Song, J.C. Ho*, Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, <111>-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition, ACS Nano, 2017, 11 (4), 4237-4246;
6. N. Han*, Z.X. Yang, F.Y. Wang, S.P. Yip, D.P. Li, T.F. Hung, Y.F. Chen, J.C. Ho*, Crystal Orientation Controlled Photovoltaic Properties of Multi-layer GaAs Nanowire Arrays, ACS Nano, 2016, 10, 6283-6290;
7. Z.X. Yang, S.P. Yip, D. Li, N. Han*, G. Dong, X. Liang, L. Shu, T.F. Hung, X. Mo, J.C. Ho*, Approaching the Hole Mobility Limit of GaSb Nanowires, ACS Nano, 2015, 9(9), 9268-9275;
8. Z.X. Yang+, N. Han+, M. Fang, H. Lin, H.Y. Cheung, S. Yip, E. Wang, T. Hung, C.Y. Wong, and J. C. Ho*, Surfactant-assisted Chemical Vapour Deposition of High-performance Small-Diameter GaSb Nanowires, Nature Communications, 2014, 5:5249;
9. N. Han, J. J. Hou, F. Y. Wang, Y. T. Yen, S. P. Yip, Z. X. Yang, T. F. Hung, Y. L. Chueh, and J. C. Ho*, GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties, ACS Nano, 2013, 7(10), 9138-9146;
10. N. Han+, F. Y. Wang+, J. J. Hou+, S. P. Yip, H. Lin, F. Xiu, M. Fang, Z. X. Yang, X. L. Shi, G. F. Dong, T. F. Hung, J. C. Ho*. Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors. Advanced Materials, 2013, 25, 4445-4451;